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| TECHNICAL DATA IN74HCT245A Octal 3-State Noninverting Bus Transceiver High-Performance Silicon-Gate CMOS The IN74HCT245A is identical in pinout to the LS/ALS245.This device may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs. The IN74HCT245A is a 3-state noninverting transceiver that is used for 2-way asynchronous communication between data buses. The device has an active-low Output Enable pin, which is used to place the I/O ports into high-impedance states. The Direction control determines whether data flows from A to B or from B to A. * TTL/NMOS Compatible Input Levels * Outputs Directly Interface to CMOS, NMOS, and TTL * Operating Voltage Range: 4.5 to 5.5 V * Low Input Current: 1.0 A ORDERING INFORMATION IN74HCT245AN Plastic IN74HCT245ADW SOIC IN74HCT245ATDS SOIC TA = -55 to 125 C for all packages PIN ASSIGNMENT LOGIC DIAGRAM FUNCTION TABLE PIN 20=VCC PIN 10 = GND Control Inputs Output Enable L Direction L Operation Data Transmitted from Bus B to Bus A Data Transmitted from Bus A to Bus B Buses Isolated (High Impedance State) L H H X X = don't care Rev. 00 IN74HCT245A MAXIMUM RATINGS* Symbol VCC VIN VOUT IIN IOUT ICC PD Tstg TL * Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) DC Output Voltage (Referenced to GND) DC Input Current, per Pin DC Output Current, per Pin DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) Value -0.5 to +7.0 -1.5 to VCC +1.5 -0.5 to VCC +0.5 20 35 75 750 500 -65 to +150 260 Unit V V V mA mA mA mW C C Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/C from 65 to 125C SOIC Package: : - 7 mW/C from 65 to 125C RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT TA tr, tf Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time (Figure 1) Min 4.5 0 -55 0 Max 5.5 VCC +125 500 Unit V V C ns This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND(VIN or VOUT)VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. Rev. 00 IN74HCT245A DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) VCC Symbol Parameter Test Conditions V Guaranteed Limit 25 C to -55C 2.0 2.0 0.8 0.8 4.4 5.4 3.98 0.1 0.1 0.26 0.1 0.5 85 C 2.0 2.0 0.8 0.8 4.4 5.4 3.84 0.1 0.1 0.33 1.0 5.0 125 C 2.0 2.0 0.8 0.8 4.4 5.4 3.7 0.1 0.1 0.4 1.0 10 A A V Unit VIH VIL VOH Minimum HighLevel Input Voltage Maximum Low Level Input Voltage Minimum HighLevel Output Voltage VOUT=0.1 V or VCC-0.1 V IOUT 20 A VOUT=0.1 V or VCC-0.1 V IOUT 20 A VIN=VIH or VIL IOUT 20 A VIN=VIH or VIL IOUT 6.0 mA 4.5 5.5 4.5 5.5 4.5 5.5 4.5 4.5 5.5 4.5 5.5 5.5 V V V VOL Maximum LowLevel Output Voltage VIN= VIL or VIH IOUT 20 A VIN= VIL or VIH IOUT 6.0 mA IIN IOZ Maximum Input Leakage Current Maximum ThreeState Leakage Current VIN=VCC or GND, Pin 1 or 19 Output in High-Impedance State VIN= VIL or VIH VOUT=VCC or GND, I/O Pins VIN=VCC or GND IOUT=0A VIN=2.4 V, Any One Input VIN=VCC or GND, Other Inputs IOUT=0A ICC Maximum Quiescent Supply Current (per Package) Additional Quiescent Supply Current 5.5 4.0 40 160 A ICC -55C 25C to 125C 2.4 mA 5.5 2.9 Rev. 00 IN74HCT245A AC ELECTRICAL CHARACTERISTICS (VCC =5.0 V 10%, CL=50pF,Input tr=tf=6.0 ns) Guaranteed Limit Symbol Parameter 25 C to -55C 22 32 30 12 10 15 85C 125C Unit tPLH, tPHL tPLZ, tPHZ tPZL, tPZH tTLH, tTHL CIN COUT Maximum Propagation Delay, A to B or B to A (Figures 1 and 3) Maximum Propagation Delay , Direction or Output Enable to A or B (Figures 2 and 4) Maximum Propagation Delay , Direction or Output Enable to A or B (Figures 2 and 4) Maximum Output Transition Time, Any Output (Figures 1 and 3) Maximum Input Capacitance (Pin 1 or Pin 19) Maximum Three-State I/O Capacitance (I/O in High-Impedance State) Power Dissipation Capacitance (Per Enable Output) 28 40 38 15 10 15 33 48 45 18 10 15 ns ns ns ns pF pF Typical @25C,VCC=5.0 V 97 pF CPD Used to determine the no-load dynamic power consumption: PD=CPDVCC2f+ICCVCC Figure 1. Switching Waveforms Figure 2. Switching Waveforms Rev. 00 IN74HCT245A Figure 3. Test Circuit Figure 4. Test Circuit EXPANDED LOGIC DIAGRAM Rev. 00 IN74HCT245A N SUFFIX PLASTIC DIP (MS - 001AD) A Dimension, mm 20 11 B 1 10 Symbol A B C MIN 24.89 6.1 MAX 26.92 7.11 5.33 F L D F 0.36 1.14 2.54 7.62 0 2.92 7.62 0.2 0.38 0.56 1.78 C -T- SEATING PLANE G H H J N G D 0.25 (0.010) M T K M J K L M N 10 3.81 8.26 0.36 NOTES: 1. Dimensions "A", "B" do not include mold flash or protrusions. Maximum mold flash or protrusions 0.25 mm (0.010) per side. D SUFFIX SOIC (MS - 013AC) A 20 11 Dimension, mm Symbol MIN 12.6 7.4 2.35 0.33 0.4 1.27 9.53 0 0.1 0.23 10 0.25 8 0.3 0.32 10.65 0.75 MAX 13 7.6 2.65 0.51 1.27 H B P A B 1 G 10 C R x 45 C D F -TD 0.25 (0.010) M T C M K SEATING PLANE J F M G H J K M P R NOTES: 1. Dimensions A and B do not include mold flash or protrusion. 2. Maximum mold flash or protrusion 0.15 mm (0.006) per side for A; for B 0.25 mm (0.010) per side. Rev. 00 IN74HCT245A TSSOP-20 Rev. 00 |
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